SEMICONDUCTOR-DEVICE SIMULATION

被引：20

作者：

FICHTNER, W ^{[1
]}

ROSE, DJ ^{[1
]}

BANK, RE ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,SAN DIEGO,CA 92093

来源：

SIAM JOURNAL ON SCIENTIFIC AND STATISTICAL COMPUTING | 1983年 / 4卷 / 03期

关键词：

D O I：

10.1137/0904031

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

引用

页码：391 / 415

页数：25

共 66 条

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[4] GLOBAL APPROXIMATE NEWTON METHODS
BANK, RE
ROSE, DJ
[J]. NUMERISCHE MATHEMATIK, 1981, 37 (02) : 279 - 295
[5] BANK RE, IEEE T ELECTRON DEVI, V30, P1031
[6] BAUER G, 1974, SPRINGER TRACTS MODE, V74
[7] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[8] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
BUTURLA, EM
COTTRELL, PE
GROSSMAN, BM
SALSBURG, KA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231
[9] BUTURLA EM, 1980, IEEE INT SOL STAT CI, P76
[10] CHANG WH, 1976, IEEE T MICROWAVE THE, V24