ELECTRO-LUMINESCENCE IN AMORPHOUS-SILICON P-I-N JUNCTIONS

被引：27

作者：

NASHASHIBI, TS

AUSTIN, IG

SEARLE, TM

GIBSON, RA

SPEAR, WE

LECOMBER, PG

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

[2] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 45卷 / 06期

关键词：

D O I：

10.1080/01418638208227610

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：553 / 571

页数：19

共 18 条

[1] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J].

AUSTIN, IG ;

NASHASHIBI, TS ;

SEARLE, TM ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :373-391

[2] TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF HYDROGENATED AMORPHOUS-SILICON AND IMPLICATIONS FOR ELECTROREFLECTANCE EXPERIMENTS [J].

BRODSKY, MH ;

LEARY, PA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :487-492

[3] OPTICALLY DETECTED MAGNETIC-RESONANCE (ODMR) IN A-SI [J].

DEPINNA, SP ;

CAVENETT, BC ;

SEARLE, TM ;

AUSTIN, IG .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :323-326

[4]

ENGEMANN D, 1976, AIP C P, V31, P37

[5] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON P-N-JUNCTION DEVICES [J].

GIBSON, RA ;

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :725-730

[6] ENHANCEMENT OF INJECTION CURRENT AT THE METAL-INSULATOR INTERFACE [J].

HUGHES, RC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :1005-1010

[7]

Le Comber P. G., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P245

[8] INJECTION LUMINESCENCE IN AMORPHOUS-SILICON P+-I-N+ JUNCTIONS [J].

NASHASHIBI, TS ;

AUSTIN, IG ;

SEARLE, TM ;

GIBSON, RA ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :467-470

[9]

NASHASHIBI TS, 1977, PHIL MAG, V20, P831

[10]

NASHASHIBI TS, 1977, 7TH P INT C AM LIQ S, P392

← 1 2 →