ALTERATION OF DIFFUSION PROFILES IN SEMICONDUCTORS DUE TO P-N-JUNCTIONS

被引：10

作者：

ANTHONY, PJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 12期

关键词：

D O I：

10.1016/0038-1101(82)90076-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1171 / 1177

页数：7

共 32 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2]

ANTHONY PJ, 1981, ELECTRON DEVIC LETT, V2, P46

[3]

Gorelenok A. T., 1979, Soviet Technical Physics Letters, V5, P606

[4] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619

[5] MG-DOPED INGAASP-INP LEDS FOR HIGH-BIT-RATE OPTICAL-COMMUNICATION SYSTEMS [J].

GROTHE, H ;

PROEBSTER, W ;

HARTH, W .

ELECTRONICS LETTERS, 1979, 15 (22) :702-703

[6]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].

HU, SM ;

SCHMIDT, S .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+

[8] USE OF HEAVY DOPING EFFECTS TO CALCULATE ELECTROSTATIC-FIELD ACTING ON IMPURITY ATOMS [J].

JAIN, RK .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :946-948

[9] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].

JOYCE, WB ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356

[10] ON AMBIPOLAR DIFFUSION OF IMPURITIES INTO SILICON [J].

KENNEDY, DP .

PROCEEDINGS OF THE IEEE, 1969, 57 (06) :1202-+

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