GEMINATE RECOMBINATION KINETICS IN AMORPHOUS-SEMICONDUCTORS

被引：6

作者：

ARKHIPOV, VI ^{[1
]}

NIKITENKO, VR ^{[1
]}

RUDENKO, AI ^{[1
]}

SHUTOV, SD ^{[1
]}

机构：

[1] KISHINEV APPL PHYS INST,KISHINEV 277028,MOLDAVIA,USSR

来源：

关键词：

D O I：

10.1016/S0022-3093(87)80382-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：53 / 56

页数：4

共 5 条

ARKHIPOV, VI ;

RUDENKO, AI .

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[2] PHOTOGENERATION AND GEMINATE RECOMBINATION IN AMORPHOUS-SILICON [J].

CARASCO, F ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05) :495-507

[3] SOLUTION OF TIME-DEPENDENT ONSAGER PROBLEM [J].

HONG, KM ;

NOOLANDI, J .

[4]

Mott N. F., 1979, ELECT PROCESSES NONC

[5] Initial recombination of ions [J].

Onsager, L .

PHYSICAL REVIEW, 1938, 54 (08) :554-557