EVALUATION OF INJECTION MODELING

被引：12

作者：

JAEGER, RC ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 07期

关键词：

D O I：

10.1016/0038-1101(76)90063-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：639 / 643

页数：5

共 10 条

[1] TERMINAL-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL) [J].

BERGER, HH ;

WIEDMANN, SK .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :211-217

[2] INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL) [J].

BERGER, HH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :218-227

[3] INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J].

CHOU, S .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :811-&

[4] ANALYSIS OF MODIFIED LATERAL PNP TRANSISTORS [J].

DEMASSA, TA ;

RISPIN, L .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :481-490

[5] FORWARD CURRENT-VOLTAGE AND SWITCHING CHARACTERISTICS OF P+-N-N+ (EPITAXIAL) DIODES [J].

DUTTON, RW ;

WHITTIER, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :458-&

[6] A 2-DIMENSIONAL MODEL FOR CALCULATION OF COMMON-EMITTER CURRENT GAINS OF LATERAL P-N-P TRANSISTORS [J].

FULKERSO.DE .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :821-&

[7]

GUMMEL HK, 1961, P IRE, V49, P834

[8]

KLASSEN FM, 1975, IEDM DEC

[9] THEORY OF LATERAL TRANSISTORS [J].

LINDMAYER, J ;

SCHNEIDER, W .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :225-+

[10]

LYNN DK, 1967, ANAL DESIGN INTEGRAT, pCH4

← 1 →