11.2 GHZ PICOSECOND OPTICAL PULSE GENERATION IN GAIN-SWITCHED SHORT-CAVITY INGAASP INJECTION-LASERS BY HIGH-FREQUENCY DIRECT MODULATION

被引:22
作者
LIN, CL
BURRUS, CA
EISENSTEIN, G
TUCKER, RS
BESOMI, P
NELSON, RJ
机构
[1] AT&T BELL LABS,CRAWFORD HILL LABS,HOLMDEL,NJ 07733
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1049/el:19840160
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:238 / 240
页数:3
相关论文
共 18 条
[1]  
ALBRECHT W, 1982, IEEE J QUANTUM ELECT, V18, P1547, DOI 10.1109/TMTT.1982.1131287
[2]   THE EFFECT OF CAVITY LENGTH ON PICOSECOND PULSE GENERATION WITH HIGHLY RF MODULATED ALGAAS DOUBLE HETEROSTRUCTURE LASERS [J].
ASPIN, GJ ;
CARROLL, JE ;
PLUMB, RG .
APPLIED PHYSICS LETTERS, 1981, 39 (11) :860-861
[3]  
BESOMI P, UNPUB
[4]   HIGH-FREQUENCY CHARACTERISTICS OF GAAIAS INJECTION-LASERS [J].
FIGUEROA, L ;
SLAYMAN, CW ;
YEN, HW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1718-1727
[5]   4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS [J].
HAGIMOTO, K ;
OHTA, N ;
NAKAGAWA, K .
ELECTRONICS LETTERS, 1982, 18 (18) :796-798
[6]   PICOSECOND OPTICAL PULSE GENERATION FROM AN RF MODULATED ALGAAS DH DIODE-LASER [J].
ITO, H ;
YOKOYAMA, H ;
MURATA, S ;
INABA, H .
ELECTRONICS LETTERS, 1979, 15 (23) :738-740
[7]   DIRECT AMPLITUDE-MODULATION OF SHORT-CAVITY GAAS-LASERS UP TO X-BAND FREQUENCIES [J].
LAU, KY ;
BARCHAIM, N ;
URY, I ;
HARDER, C ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 43 (01) :1-3
[8]   VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].
LEE, TP ;
BURRUS, CA ;
OGAWA, K ;
DENTAI, AG .
ELECTRONICS LETTERS, 1981, 17 (12) :431-432
[9]   PICOSECOND FREQUENCY CHIRPING AND DYNAMIC LINE BROADENING IN INGAASP INJECTION-LASERS UNDER FAST EXCITATION [J].
LIN, C ;
LEE, TP ;
BURRUS, CA .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :141-143
[10]   SIMPLE PICOSECOND PULSE GENERATION SCHEME FOR INJECTION-LASERS [J].
LIN, C ;
LIU, PL ;
DAMEN, TC ;
EILENBERGER, DJ ;
HARTMAN, RL .
ELECTRONICS LETTERS, 1980, 16 (15) :600-602