EXPERIMENTAL-DETERMINATION OF THE PRESSURE-DEPENDENCE OF THE BARRIER HEIGHT OF METAL [N-TYPE GAAS] SCHOTTKY CONTACTS - A CRITICAL TEST OF SCHOTTKY-BARRIER MODELS

被引：14

作者：

PHATAK, P

NEWMAN, N

DRESZER, P

WEBER, ER

机构：

[1] Department of Materials Science, University of California, Berkeley

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.51.18003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The experimentally measured pressure dependence of the Au/[n-type GaAs] barrier height, 9.5 meV/kbar, is consistent with the theoretically calculated value for an interface with a high concentration of As antisite defects while it is inconsistent with the calculated value for an ideal interface. This is conclusive evidence that Fermi-level pinning is dominated by defects at a metal/semiconductor interface, whereas the pressure dependence of the Al/[n-type GaAs] barrier height, 10.5 meV/kbar, is consistent with the prediction of an ideal interface. © 1995 The American Physical Society.

引用

页码：18003 / 18006

页数：4

共 26 条

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