MONTE-CARLO STUDIES OF TERNARY SEMICONDUCTOR ALLOYS - APPLICATION TO THE SI1-X-YGEXCY SYSTEM

被引：108

作者：

KELIRES, PC ^{[1
]}

机构：

[1] FDN RES & TECHNOL HELLAS, GR-71110 IRAKLION, GREECE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.75.1114

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structural properties of Si-Ge-C alloys are studied using Monte Carlo simulations. The large size mismatch among the constituents is overcome by introducing atom-identity switches accompanied with neighbor-atom relaxations. A repulsive interaction between carbon atoms is found, so no clustering is observed. No formation of Ge-C bonds is foreseen. The lattice structural parameters show strong deviations from linear behavior.

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页码：1114 / 1117

页数：4

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