MIGRATION OF IMPLANTED INDIUM IN SILICON AS A FUNCTION OF THERMAL ANNEALING

被引：2

作者：

REIHL, RF

SMITH, GA

KATZ, W

KOCH, EF

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.94006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：575 / 577

页数：3

共 20 条

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[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].

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[3] SOLUTE TRAPPING BY MOVING INTERFACE IN ION-IMPLANTED SILICON [J].

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FOTI, G ;

BAERI, P ;

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RIMINI, E .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :719-722

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

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GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[5] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[6] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[7] THERMAL REDISTRIBUTION OF INDIUM IN AMORPHOUS-SILICON LAYERS [J].

ELLIMAN, RG .

RADIATION EFFECTS LETTERS, 1981, 67 (03) :77-82

[8]

ERIKSSON L, 1969, J APPL PHYS, V40, P847

[9] DECHANNELLING OF MEV HE IONS BY TWINNED REGIONS IN IMPLANTED SI CRYSTALS [J].

FOTI, G ;

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

PRONKO, PP ;

RECHTIN, MD .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (05) :591-604

[10]

GAMO K, 1978, JPN J APPL PHYS, V12, P735

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