CORE LEVEL PHOTOEMISSION-STUDY OF THE INTERACTION OF PLASMAS WITH REAL GAAS (100) SURFACES

被引：21

作者：

GOURRIER, S ^{[1
]}

FRIEDEL, P ^{[1
]}

LARSEN, PK ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1985年 / 152卷 / APR期

关键词：

D O I：

10.1016/0039-6028(85)90533-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1147 / 1152

页数：6

共 8 条

[1] RELAXATION DURING PHOTOEMISSION AND LMM AUGER DECAY IN ARSENIC AND SOME OF ITS COMPOUNDS [J].

BAHL, MK ;

WOODALL, RO ;

WATSON, RL ;

IRGOLIC, KJ .

JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (03) :1210-1218

[2] IMPROVEMENTS IN GAAS PLASMA-DEPOSITED SILICON-NITRIDE INTERFACE QUALITY BY PRE-DEPOSITION GAAS SURFACE-TREATMENT AND POST-DEPOSITION ANNEALING [J].

CLARK, MD ;

ANDERSON, CL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :453-456

[3]

DEMAY Y, 1983, THESIS ORSAY

[4] INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES [J].

FRIEDEL, P ;

GOURRIER, S .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :509-511

[5]

FRIEDEL P, 1984, 1984 PCSI C RAYL

[6] PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA [J].

GOURRIER, S ;

SMIT, L ;

FRIEDEL, P ;

LARSEN, PK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3993-3997

[7] CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE [J].

GRUNTHANER, PJ ;

VASQUEZ, RP ;

GRUNTHANER, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1045-1051

[8]

IWAZAKI H, 1979, JPN J APPL PHYS, V18, P1525

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