CURRENT DRIFT MECHANISM IN IN0.53GA0.47AS DEPLETION MODE METAL-INSULATOR FIELD-EFFECT TRANSISTORS

被引:10
作者
TAILLEPIED, M
GOURRIER, S
机构
关键词
D O I
10.1063/1.96629
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:978 / 980
页数:3
相关论文
共 7 条
[1]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[2]   SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J].
CHENG, CL ;
LIAO, ASH ;
CHANG, TY ;
LEHENY, RF ;
COLDREN, LA ;
LALEVIC, B .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :169-171
[3]   CHARACTERISTICS OF THE LOW-TEMPERATURE-DEPOSITED SIO2-GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR INTERFACE [J].
GARDNER, PD ;
NARAYAN, SY ;
YUN, YH .
THIN SOLID FILMS, 1984, 117 (03) :173-190
[4]  
GRUGGEMAN DAG, 1935, ANN PHYS LEIPZIG, V24, P626
[5]  
SAWADA T, 1985, 16TH INT C SOL STAT, P367
[6]  
TAILLEPIED M, 1986, 4TH P INS FILMS SEM, P85
[7]   TIME-DEPENDENT RESPONSE OF INTERFACE STATES IN INDIUM-PHOSPHIDE METAL-INSULATOR SEMICONDUCTOR CAPACITORS INVESTIGATED WITH CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
VANSTAA, P ;
ROMBACH, H ;
KASSING, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4014-4021