FEMTOSECOND CARRIER DYNAMICS IN LOW-TEMPERATURE-GROWN INDIUM-PHOSPHIDE

Up-conversion luminescence and pump-probe spectroscopy are used to determine the energy distribution and recombination kinetics of photoexcited carriers in low-temperature-grown InP. The samples used are two unannealed InP films grown at 200 and 300°C. The photoexcited carriers undergo fast trapping in less than 1 ps with recombination taking place on a much longer time scale. The carrier trapping time is found to be 500±100 fs for the 200°C sample and 1.6±0.05 ps for the 300°C sample and the trap photoionization cross section is estimated to be 10-16cm2. © 1995 American Institute of Physics.