RESISTANCE OF ATOMIC WIRES

被引:416
作者
LANG, ND
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1103/PhysRevB.52.5335
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The resistance of wires consisting of 1-3 atoms connecting two semi-infinite metallic electrodes is calculated for both small and large bias. The wires discussed consist of Al atoms, with one of the Al atoms substituted by S in certain cases. The resistances obtained are in the range 7-similar to 30 k Omega. For the three-atom wire, the value of the resistance when thr: S atom is present depends on the order of the atoms in the wire. When the S is an end atom, the resistance at larger bias also shows a dependence on polarity (diode behavior). These studies involve a self-consistent calculation of the electron density distribution for the entire electrode/wire system.
引用
收藏
页码:5335 / 5342
页数:8
相关论文
共 72 条
[1]   TIP-SAMPLE INTERACTIONS IN THE SCANNING TUNNELING MICROSCOPE FOR ATOMIC-SCALE STRUCTURE FABRICATION [J].
AONO, M ;
KOBAYASHI, A ;
GREY, F ;
UCHIDA, H ;
HUANG, DH .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (3B) :1470-1477
[2]   BALLISTIC ELECTRONIC CONDUCTANCE OF AN ORIFICE [J].
AVISHAI, Y ;
BAND, YB .
PHYSICAL REVIEW B, 1989, 40 (18) :12535-12538
[3]   STUDIES OF CONFINED STATES AND QUANTUM-SIZE EFFECTS WITH SCANNING-TUNNELING-MICROSCOPY [J].
AVOURIS, P .
SOLID STATE COMMUNICATIONS, 1994, 92 (1-2) :11-&
[4]   PROBING THE CHEMISTRY AND MANIPULATING SURFACES AT THE ATOMIC SCALE WITH THE STM [J].
AVOURIS, P ;
LYO, IW .
APPLIED SURFACE SCIENCE, 1992, 60-1 :426-436
[5]   SCANNING TUNNELING MICROSCOPE TIP SAMPLE INTERACTIONS - ATOMIC MODIFICATION OF SI AND NANOMETER SI SCHOTTKY DIODES [J].
AVOURIS, P ;
LYO, IW ;
HASEGAWA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (04) :1725-1732
[6]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[7]  
BEENAKKER CWJ, 1991, SOLID STATE PHYS, V44, P1
[8]   SELF-CONSISTENT-FIELD MODEL OF BIMETALLIC INTERFACES .I. DIPOLE EFFECTS [J].
BENNETT, AJ ;
DUKE, CB .
PHYSICAL REVIEW, 1967, 160 (03) :541-+
[9]   GENERALIZED MANY-CHANNEL CONDUCTANCE FORMULA WITH APPLICATION TO SMALL RINGS [J].
BUTTIKER, M ;
IMRY, Y ;
LANDAUER, R ;
PINHAS, S .
PHYSICAL REVIEW B, 1985, 31 (10) :6207-6215
[10]   QUANTIZED TRANSMISSION OF A SADDLE-POINT CONSTRICTION [J].
BUTTIKER, M .
PHYSICAL REVIEW B, 1990, 41 (11) :7906-7909