ANTIFERROMAGNETISM IN THE DY5IR4SI10 SYSTEM

被引：28

作者：

RAMAKRISHNAN, S

GHOSH, K

CHANDRA, G

机构：

[1] Tata Institute of Fundamental Research

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.45.10769

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the dc susceptibility and resistivity studies of the antiferromagnet Dy5Ir4Si10. We find that this compound undergoes an antiferromagnetic transition at 5.0 K and the effective magnetic moment observed is 10.6-mu(B), which is equal to the free-ion value for the Dy atom. However, the resistivity shows a broad minimum at 17 K and a maximum at 6.5 K before it decreases below 6 K. We attribute this behavior of the resistivity to magnetic superzone effects in this compound.

引用

页码：10769 / 10771

页数：3

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