THE EFFECT OF PROCESS PARAMETER VARIATION ON POLYSILICON TEMPERATURE TRANSDUCER CHARACTERISTICS

被引：2

作者：

ZUCKER, O

LANGHEINRICH, W

MEYER, J

机构：

[1] Institut für Halbleitertechnik, Technische Hochschule Darmstadt, D-6100 Darmstadt

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 32卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(92)80023-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polysilicon layers for application in temperature sensors have been investigated. Hence the characteristics of polysilicon resistors as a function of process parameter variation have been studied. Continuing our previous work, the effect of annealing temperature and time on the thermal behaviour of polysilicon layers is shown in this paper. Also a pre-annealing step preceding the implantation of the dopant has been included in our experiments and the results of this investigation are discussed. It is then shown how layer thickness affects the temperature characteristics of polysilicon meanders. Finally, the characteristics of the temperature transducer of our developed multifunctional sensor are described.

引用

页码：419 / 422

页数：4