SPONTANEOUS EMISSION IN PLANAR SEMICONDUCTOR MICROCAVITIES DISPLAYING VACUUM RABI SPLITTING

被引：25

作者：

ABRAM, I

OUDAR, JL

机构：

[1] France Telecom/CNET, Centre Paris B, Laboratoire de Bagneux, 92220 Bagneux

来源：

PHYSICAL REVIEW A | 1995年 / 51卷 / 05期

关键词：

D O I：

10.1103/PhysRevA.51.4116

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We calculate the spontaneous-emission characteristics of a quantum-well exciton embedded in the center of a planar microcavity and compare them with the emission characteristics in a single-mode cavity with lateral confinement of the electromagnetic field. The results indicate that because the modal structure of a planar microcavity consists of a spectrally dense continuum, the exciton decays into the cavity continuum with a time constant close to the free-space spontaneous-emission lifetime, even under conditions in which its spectrum displays the vacuum Rabi splitting. This behavior contrasts with the case of cavities with lateral in-plane confinement of the field, in which the vacuum Rabi splitting is the signature of a dramatic modification of the spontaneous-emission lifetime. The technological implications of this difference are discussed. © 1995 The American Physical Society.

引用

页码：4116 / 4122

页数：7

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