Sputter deposition of high transition temperature Ti-Ni-Hf alloy thin films

Using conventional DC magnetron sputtering-deposition processes, films of 2-5 mu m thick were deposited on silicon wafers from a 40at.%Ti-50at.%Ni-10at.%Hf target having an M(s) point of similar to 120 degrees C. It was found that the transformation start temperature of deposited thin films can be adjusted in a temperature range from 100 degrees C to 200 degrees C by placing additional Ti or Hf pieces on the target's surface.