ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON

被引：69

作者：

PENCHINA, CM

MOORE, JS

HOLONYAK, N

机构：

来源：

PHYSICAL REVIEW | 1966年 / 143卷 / 02期

关键词：

D O I：

10.1103/PhysRev.143.634

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：634 / &

共 8 条

[1]

Bardeen J., 1956, PHOTOCONDUCTIVITY C

[2] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J].

HOLONYAK, N ;

BEVACQUA, SF .

[3] INFRARED PROPERTIES OF GOLD IN GERMANIUM [J].

JOHNSON, L ;

LEVINSTEIN, H .

PHYSICAL REVIEW, 1960, 117 (05) :1191-1203

[4] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

MACFARLANE, GG ;

MCLEAN, TP ;

QUARRINGTON, JE ;

ROBERTS, V .

PHYSICAL REVIEW, 1958, 111 (05) :1245-1254

[5]

MOORE JB, TO BE PUBLISHED

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

[7] NEGATIVE PHOTOEFFEKTE IN HALBLEITERN [J].

STOCKMANN, F .

ZEITSCHRIFT FUR PHYSIK, 1955, 143 (03) :348-356

[8]

Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1