PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES

被引：56

作者：

FORREST, SR

SMITH, RG

KIM, OK

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1109/JQE.1982.1071478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2040 / 2048

页数：9

共 29 条

[11] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[12] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

FORREST, SR ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :322-325

[13] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5738-5745

[14] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING [J].

FORREST, SR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :217-226

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FORREST SR, 1981, UNPUB

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Ghandhi SK, 1977, SEMICONDUCTOR POWER

[17] TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES [J].

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SOLID-STATE ELECTRONICS, 1981, 24 (05) :421-424

[18] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

KIM, OK ;

FORREST, SR ;

BONNER, WA ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404

[19] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J].

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DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :232-238

[20] CHARACTERIZATION OF IN0.53GA0.47AS PHOTO-DIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCE [J].

LEHENY, RF ;

NAHORY, RE ;

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DEWINTER, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :227-231

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