MECHANISM OF CATASTROPHIC DEGRADATION IN INGAASP/INP DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES AND GAALAS DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES APPLIED WITH PULSED LARGE CURRENT

被引：11

作者：

UEDA, O ^{[1
]}

YAMAKOSHI, S ^{[1
]}

SANADA, T ^{[1
]}

UMEBU, I ^{[1
]}

KOTANI, T ^{[1
]}

HASEGAWA, O ^{[1
]}

机构：

[1] FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9170 / 9179

页数：10

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