ELIMINATION OF LOW-TEMPERATURE DRAIN IV COLLAPSE OF SELECTIVELY DOPED (AL,GA)AS/GAAS HETEROSTRUCTURE TRANSISTORS BY A MODULATION-DOPED SUPERLATTICE DONOR LAYER

被引：4

作者：

TU, CW

CHEVALLIERS, J

HENDEL, RH

DINGLE, R

SCIORTINO, PF

BRENNAN, TM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：802 / 802

页数：1

相关论文

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[1] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
BABA, T
MIZUTANI, T
OGAWA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629
[2] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578
[3] PEI SS, 1984, IEEE GAAS IC S, P129