TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE AFTEREFFECTS IN THE SEMICONDUCTOR IN2O3

被引：45

作者：

BIBILONI, AG

DESIMONI, J

MASSOLO, CP

MENDOZAZELIS, L

PASQUEVICH, AF

SANCHEZ, FH

LOPEZGARCIA, A

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.29.1109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1109 / 1111

页数：3

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