A NEW GA0.47IN0.53AS FIELD-EFFECT TRANSISTOR WITH A LATTICE-MISMATCHED GAAS GATE FOR HIGH-SPEED CIRCUITS

被引：18

作者：

CHEN, CY

CHO, AY

GARBINSKI, PA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 01期

关键词：

D O I：

10.1109/EDL.1985.26028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / 21

页数：2

共 17 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P8

[2] QUASI-SCHOTTKY BARRIER DIODE ON N-GA-0.47IN-0.53 AS USING A FULLY DEPLETED P+-GA-0.47IN-0.53 AS LAYER GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHEN, CY ;

CHO, AY ;

CHENG, KY ;

GARBINSKI, PA .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :401-403

[3] SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS [J].

CHEN, CY ;

CHO, AY ;

ALAVI, K ;

GARBINSKI, PA .

ELECTRON DEVICE LETTERS, 1982, 3 (08) :205-208

[4]

Cheng C. L., 1983, International Electron Devices Meeting 1983. Technical Digest, P754

[5]

Cheng K. S., COMMUNICATION

[6] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].

GREENE, PD ;

WHEELER, SA ;

ADAMS, AR ;

ELSABBAHY, AN ;

AHMAD, CN .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80

[7]

HAASE MA, 1984, 42ND DEV RES C SANT

[8] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[9] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].

LEHENY, RF ;

BALLMAN, AA ;

DEWINTER, JC ;

NAHORY, RE ;

POLLACK, MA .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :561-568

[10] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

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