VARISTOR CHARACTERISTICS OF (BA,SR)TIO3 SEMICONDUCTING CERAMICS FIRED IN REDUCING-REOXIDIZING ATMOSPHERE

被引：10

作者：

ISHIYA, T

TASHIRO, S

IGARASHI, H

机构：

[1] Department of Electronic Engineering, The National Defense Academy, Waseda University, Hashirimizu

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

(BA; SR)TIO3; SEMICONDUCTOR; POSITIVE TEMPERATURE COEFFICIENT OF RESISTIVITY (PTCR); REDUCING ATMOSPHERE; ANNEALING; REOXIDATION; VARISTOR; POTENTIAL BARRIER; BARRIER CAPACITANCE;

D O I：

10.1143/JJAP.34.5309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Varistor characteristics at room temperature were estimated for (Ba, Sr)TiO3 semiconducting ceramics having positive temperature coefficient of resistivity (PTCR) characteristics and a low Curie point less than -100 degrees. The samples were sintered in a reducing atmosphere at 1350 or 1400 degrees C for 2 h and then annealed in an oxygen atmosphere at 1200 degrees C for 2 h in the cooling process. These samples showed high permittivity originating from the barrier capacitance at grain boundaries in addition to the varistor characteristics. The varistor characteristics and dielectric properties depended on the potential barrier formed by the annealing in oxygen atmosphere.

引用

页码：5309 / 5312

页数：4

共 6 条

[1] GRAIN-BOUNDARY OXIDATION IN PTCR BARIUM-TITANATE THERMISTORS [J].