INTERSUBBAND RELAXATION OF HOT EXCITONS IN GAAS QUANTUM-WELLS

被引：2

作者：

HOPFEL, RA

RODRIGUES, R

LIMURA, Y

YASUI, T

SEGAWA, Y

AOYAGI, Y

GOODNICK, SM

机构：

[1] FRONTIER RES PROGRAM, SAITAMA 35101, JAPAN

[2] OREGON STATE UNIV, DEPT ELECT & COMP ENGN, CORVALLIS, OR 97331 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130 +/- 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.

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收藏

页码：733 / 735

页数：3

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