Tetrahedral structures and phase transitions in III-V semiconductors (vol 50, pg 8389, 1994)

被引：11

作者：

Crain, J

Piltz, RO

Ackland, GJ

Clark, SJ

Payne, MC

Milman, V

Lin, JS

Hatton, PD

Nam, YH

机构：

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 23期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.52.16936

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：16936 / 16937

页数：2

共 4 条

[1] TETRAHEDRAL STRUCTURES AND PHASE-TRANSITIONS IN III-V SEMICONDUCTORS [J].

CRAIN, J ;

PILTZ, RO ;

ACKLAND, GJ ;

PAYNE, MC ;

MILMAN, V ;

LIN, JS ;

HATTON, PD ;

NAM, YH ;

CLARK, SJ .

PHYSICAL REVIEW B, 1994, 50 (12) :8389-8401

[2] FIRST-PRINCIPLES PSEUDOPOTENTIAL STUDY OF THE PHASE-STABILITY OF THE III-V SEMICONDUCTORS GAAS AND ALAS [J].

MUJICA, A ;

NEEDS, RJ ;

MUNOZ, A .

PHYSICAL REVIEW B, 1995, 52 (12) :8881-8892

[3] AMORPHIZATION FROM THE QUENCHED HIGH-PRESSURE PHASE IN TETRAHEDRALLY-BONDED MATERIALS [J].

TSUJI, K ;

KATAYAMA, Y ;

YAMAMOTO, Y ;

KANDA, H ;

NOSAKA, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) :559-562

[4] ZINC-BLENDE-WURTZITE POLYTYPISM IN SEMICONDUCTORS [J].

YEH, CY ;

LU, ZW ;

FROYEN, S ;

ZUNGER, A .

PHYSICAL REVIEW B, 1992, 46 (16) :10086-10097

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