THEORY OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS

被引:288
作者
WEEKS, JD [1 ]
TULLY, JC [1 ]
KIMERLING, LC [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1975年 / 12卷 / 08期
关键词
D O I
10.1103/PhysRevB.12.3286
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3286 / 3292
页数:7
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