TRANSIENT RESPONSE OF DOUBLE INJECTION IN A SEMICONDUCTOR OF FINITE CROSS SECTION

被引:30
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BARON, R
MARSH, OJ
MAYER, JW
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10.1063/1.1782094
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O59 [应用物理学];
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页码:2614 / &
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共 17 条
[1]   DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J].
ASHLEY, KL ;
MILNES, AG .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :369-&
[2]   EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J].
BARON, R .
PHYSICAL REVIEW, 1965, 137 (1A) :A272-&
[3]   CURRENT-VOLTAGE CHARACTERISTICS OF LARGE DOUBLE INJECTION IN SI P-I-N STRUCTURES ( SPACE CHARGE RECOMBINATION LI COMPENSATION O-25 DEGREES C E/T ) [J].
BARON, R ;
MARSH, OJ ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1964, 4 (04) :65-&
[4]  
BARON R, TO BE PUBLISHED
[5]  
BLAKEMORE JS, 1963, J APPL PHYS, V31, P753
[7]   THEORY OF DOUBLE INJECTION INTO A SEMICONDUCTOR OF FINITE CROSS-SECTION [J].
HIROTA, R ;
TOSIMA, S ;
LAMPERT, MA .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (04) :535-&
[8]   DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].
HOLONYAK, N .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&
[9]  
KEATING PN, 1964, PHYS REV A-GEN PHYS, V135, P1407
[10]   VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J].
LAMPERT, MA ;
ROSE, A .
PHYSICAL REVIEW, 1961, 121 (01) :26-&