DETERMINATION OF REFRACTIVE-INDEXES OF IN0.52AL0.48AS ON INP IN THE WAVELENGTH RANGE FROM 250 TO 1900 NM BY SPECTROSCOPIC ELLIPSOMETRY

被引：3

作者：

DINGES, HW

BURKHARD, H

LOSCH, R

NICKEL, H

SCHLAPP, W

机构：

[1] Deutsche Bundespost Telekom Forschungsund Technologiezentrum, W-6100 Darmstadt

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 20卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(93)90423-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In a previous paper, we found that between InP and In0.52Al0.48As grown by molecular beam epitaxy, an interface layer exists, owing to the interaction of arsenic with InP in the preheat phase of the MBE growth. To determine the refractive index and thicknesses of the In0.52Al0.48As and the interface layer in the wavelength range from 300 to 1900 nm, layers 10, 20, 200 and 2000 nm thick of MBE-grown In0.52Al0.48As on InP were investigated using spectroscopic ellipsometry.

引用

页码：180 / 182

页数：3

共 7 条

[1] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].