CHALCOGEN INTERDIFFUSION IN PBSE/PBTE HETEROSTRUCTURES

被引：7

作者：

BELYANSKY, MP

GASKOV, AM

STRELKOV, AV

机构：

[1] Chemistry Department, Moscow State University, Moscow

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 15卷 / 01期

关键词：

D O I：

10.1016/0921-5107(92)90035-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model based on the Darken theory was used to describe interdiffusion in PbSe/PbTe heterostructures. Chalcogen diffusion coefficients were calculated from the selenium and tellurium concentration depth profiles recorded by sputtered-neutrals mass spectrometry technique. The temperature dependences of the chalcogen diffusion coefficients were obtained in the temperature range 620-750 K. The influence of the surface damaged layer is considered to be responsible for the observed deflection from the Darken model of diffusion.

引用

页码：78 / 81

页数：4

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