MODIFICATION OF ABSORPTION-EDGE OF GAAS ARISING FROM HOT-ELECTRON EFFECTS

被引：7

作者：

MCGRODDY, JC ^{[1
]}

CHRISTENSEN, O ^{[1
]}

机构：

[1] TECH UNIVVDENMARK, LYNGBY, DENMARK

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.8.5592

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5592 / 5596

页数：5

共 14 条

[1] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+

[2] INDIRECT TRANSITIONS AT THE CENTER OF THE BRILLOUIN ZONE WITH APPLICATION TO INSB, AND A POSSIBLE NEW EFFECT [J].

DUMKE, WP .

PHYSICAL REVIEW, 1957, 108 (06) :1419-1425

[3] INTERACTION BETWEEN A LIGHT BEAM AND A GUNN OSCILLATOR NEAR FUNDAMENTAL EDGE OF GAAS [J].

GUETIN, P .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4114-+

[4] EFFECT OF ELECTRON-EXCITON COLLISIONS ON FREE-EXCITON LINEWIDTH IN EPITAXIAL GAAS [J].

LEITE, RCC ;

SHAH, J ;

GORDON, JP .

PHYSICAL REVIEW LETTERS, 1969, 23 (23) :1332-&

[5]

MASSEY HSW, 1969, ELECTRONIC IONIC IMP

[6] FIRST ORDER RAMAN EFFECT IN 3-V COMPOUNDS [J].

MOORADIAN, A ;

WRIGHT, GB .

SOLID STATE COMMUNICATIONS, 1966, 4 (09) :431-+

[7] OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].

MOSS, TS .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2136-&

[8] ABSORPTION EDGE OF GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].

PAIGE, EGS ;

REES, HD .

PHYSICAL REVIEW LETTERS, 1966, 16 (11) :444-&

[9] REPRESENTATION OF FRANZ-KELDYSH EFFECT BY SPECTRAL BROADENING [J].

REES, HD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (01) :143-&

[10] RADIATIVE RECOMBINATION FROM FIELD-EXCITED HOT CARRIERS IN N-GAAS [J].

SOUTHGATE, PD ;

HALL, DS .

APPLIED PHYSICS LETTERS, 1970, 16 (07) :280-+

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