SILICON DIODE DOSIMETRY

被引：33

作者：

DIXON, RL

EKSTRAND, KE

机构：

来源：

INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES | 1982年 / 33卷 / 11期

关键词：

D O I：

10.1016/0020-708X(82)90242-3

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：1171 / 1176

页数：6

共 23 条

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[3]

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EKSTRAND, KE .

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[5]

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[6]

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[8] INSTRUMENT FOR RAPID CHECK OF OUTPUT, ENERGY AND FIELD SYMMETRY OF SUPERVOLTAGE THERAPY EQUIPMENT [J].

JONES, D ;

SCHUMACHER, D .

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[9] STABILIZATION OF RADIATION-DAMAGE IN A SILICON DIODE RADIATION DETECTOR [J].

JONES, D ;

SCHUMACHER, D .

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[10]

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