ON THE EFFECT OF AMBIENTS ON THE FORMATION OF OXYGEN-RELATED DONORS IN CZ-SI

被引：3

作者：

SCHMALZ, K

GAWORZEWSKI, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期

关键词：

D O I：

10.1002/pssa.2210780258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K141 / K145

页数：5

共 9 条

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[3]

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[7] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR [J].

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[9] ON THE DONOR ACTIVITY OF OXYGEN IN SILICON AT TEMPERATURES FROM 500 TO 800-DEGREES-C [J].

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