A HIGH-SPEED INP-BASED INXGA1-XAS SCHOTTKY-BARRIER INFRARED PHOTODIODE FOR FIBER-OPTIC COMMUNICATIONS

被引：11

作者：

KIM, JH

LI, SS

FIGUEROA, L

CARRUTHERS, TF

WAGNER, RS

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] UNIV CALIF LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6536 / 6540

页数：5

共 14 条

[1] FABRICATION AND CHARACTERIZATION OF GAAS SCHOTTKY-BARRIER PHOTODETECTORS FOR MICROWAVE FIBER OPTIC LINKS [J].

BLAUVELT, H ;

THURMOND, G ;

PARSONS, J ;

LEWIS, D ;

YEN, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :195-196

[2]

Carruthers T. F., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P483

[3] HIGH-SPEED GALNAS SCHOTTKY PHOTODETECTOR [J].

EMEIS, N ;

SCHUMACHER, H ;

BENEKING, H .

ELECTRONICS LETTERS, 1985, 21 (05) :180-181

[4]

FIGUEROA L, 1981, IEEE T ELECTRON DEVI, V2, P112

[5] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[6] BARRIER HEIGHT ENHANCEMENT OF INP-BASED N-GA0.47IN0.53AS SCHOTTKY-BARRIER DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

KIM, JH ;

LI, SS ;

FIGUEROA, L .

ELECTRONICS LETTERS, 1988, 24 (11) :687-689

[7]

KIM JH, 1986, ELECTRON PHOTON, V22, P214

[8]

KIM JH, 1986, P INT C LASER 86 ORL, P354

[9]

KIM JH, 1986, SPIE P, V716, P96

[10] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :232-238

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