MOLECULAR-BEAM EPITAXIAL-GROWTH AND MAGNETOTRANSPORT STUDIES OF THE INSB/CDTE MATERIAL SYSTEM

The authors report studies into the molecular beam epitaxial growth and characterisation of InSb/CdTe heterojunction and multilayer structures. It is shown that the use of a Cd/Te flux ratio of 3/1 (JCd/J Te=3) during the growth of CdTe results in the formation of a high-quality InSb/CdTe interface as assessed by transmission electron microscopy and magneto-transport studies. The quantum Hall effect is observed in single heterostructures formed by the growth of CdTe under JCd/J Te=3 flux conditions on InSb at a substrate temperature of 200 degrees C. The electrical results are repeatable with mobilities in the region of 24000 cm2 V-1 s-1 at 4.2 K. Growth of CdTe under JCd/JTe=3 flux conditions has allowed growth on InSb at a substrate temperature of 300 degrees C and resulted in the successful growth of InSb/CdTe superlattices at substrate temperatures compatible with the growth of electrically active InSb.