STIMULATED-EMISSION SPECTRA OF ALX GA1-XAS NEAR THE DIRECT-INDIRECT GAP CROSSOVER COMPOSITION

被引：13

作者：

SARFATY, R

RON, A

COHEN, E

LOGAN, RA

机构：

[1] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

[2] TECHNION ISRAEL INST TECHNOL, DEPT PHYS, IL-32000 HAIFA, ISRAEL

[3] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期

关键词：

ALUMINUM ARSENIDES - ELECTRON-HOLE DROPLETS - ENERGY GAP - STIMULATED EMISSION;

D O I：

10.1063/1.336598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：780 / 786

页数：7

共 21 条

[1] NON-EQUILIBRIUM PROPERTIES OF ELECTRON-HOLE PLASMA IN DIRECT-GAP SEMICONDUCTORS [J].

BOHNERT, K ;

ANSELMENT, M ;

KOBBE, G ;

KLINGSHIRN, C ;

HAUG, H ;

KOCH, SW ;

SCHMITTRINK, S ;

ABRAHAM, FF .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1981, 42 (01) :1-11

[2]

CASEY HC, 1978, HETEROJUNCTION LAS A

[3] ELECTRON-HOLE PLASMA IN PHOTO-EXCITED INDIRECT-GAP ALXGA1-XAS [J].

COHEN, E ;

STURGE, MD ;

OLMSTEAD, MA ;

LOGAN, RA .

PHYSICAL REVIEW B, 1980, 22 (02) :771-777

[4]

DINGLE R, 1977, GAAS RELATED COMPOUN, P210

[5]

GOEBEL E, 1974, APPL PHYS LETT, V24, P492

[6] WAVELENGTH DEPENDENCE OF GAIN SATURATION IN GAAS LASERS [J].

GOEBEL, EO ;

HILDEBRAND, O ;

LOHNERT, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (10) :848-854

[7]

HENSEL JC, 1977, ADV SOLID STATE PHYS, V32

[8] ELECTRON-HOLE PLASMA IN DIRECT-GAP SEMICONDUCTORS WITH LOW POLAR COUPLING - GAAS, INP, AND GASB [J].

HILDEBRAND, O ;

GOEBEL, EO ;

ROMANEK, KM ;

WEBER, H ;

MAHLER, G .

PHYSICAL REVIEW B, 1978, 17 (12) :4775-4787

[9] EXPONENTIAL-DISTRIBUTION OF THE RADIATIVE DECAY-RATES INDUCED BY ALLOY SCATTERING IN AN INDIRECT-GAP SEMICONDUCTOR [J].

KLEIN, MV ;

STURGE, MD ;

COHEN, E .

PHYSICAL REVIEW B, 1982, 25 (06) :4331-4333

[10] OPTICAL-PROPERTIES OF HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS [J].

KLINGSHIRN, C ;

HAUG, H .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1981, 70 (05) :315-398

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