THEORETICAL-STUDY OF THE PHOTOVOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON

被引：9

作者：

JOSHI, DP

SRIVASTAVA, RS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2849 / 2858

页数：10

共 51 条

[1] THIN-FILM SOLAR-CELLS - A UNIFIED ANALYSIS OF THEIR POTENTIAL [J].

BARNETT, AM ;

ROTHWARF, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :615-630

[2] THE PHOTOCONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS [J].

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3671-3673

[3] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].

CARD, HC ;

YANG, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402

[4]

CHEEK G, 1980, SOLID STATE TECH FEB, P102

[5]

Chu T. L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1106

[6] VACUUM-DEPOSITED POLYCRYSTALLINE SILICON SOLAR-CELLS ON FOREIGN SUBSTRATES [J].

FELDMAN, C ;

SATKIEWICZ, FG ;

BLUM, NA .

THIN SOLID FILMS, 1982, 90 (04) :461-471

[7] EVAPORATED POLYCRYSTALLINE SILICON FILMS FOR PHOTO-VOLTAIC APPLICATIONS - GRAIN-SIZE EFFECTS [J].

FELDMAN, C ;

BLUM, NA ;

CHARLES, HK ;

SATKIEWICZ, FG .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (02) :309-336

[8] ANALYSIS OF MINORITY-CARRIER TRANSPORT IN POLYSILICON DEVICES [J].

FOSSUM, JG ;

SUNDARESAN, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1185-1197

[9] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J].

FOSSUM, JG ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :692-700

[10] THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON [J].

GHOSH, AK ;

FISHMAN, C ;

FENG, T .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :446-454

← 1 2 3 4 5 6 →