0.1 EV HGCDTE PHOTODETECTORS

被引：47

作者：

KINCH, MA ^{[1
]}

BORRELLO, SR ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

INFRARED PHYSICS | 1975年 / 15卷 / 02期

关键词：

D O I：

10.1016/0020-0891(75)90019-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：111 / 124

页数：14

共 17 条

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[2] BEBB HB, COMMUNICATION
[3] BRAU MJ, TO BE PUBLISHED
[4] EPITAXIAL (CDHG)TE INFRARED PHOTOVOLTAIC DETECTORS
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[6] Hall R. N., 1959, P IEEE, V106, P923, DOI [DOI 10.1049/PI-B-2.1959.0171, 10.1049/pi-b-2.1959.0171]
[7] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1649 - 1663
[8] KINCH MA, 1972, AFALTR72118 TECH REP
[9] CARRIER DENSITY FLUCTUATIONS IN SEMICONDUCTORS AND PHOTOCONDUCTORS WITH ONE KIND OF TRAPPING CENTERS
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[J]. PHYSICA, 1960, 26 (08): : 605 - 617
[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243