APPLICATION OF SURFACE-WAVES TO STUDY OF SEMICONDUCTOR SURFACE STATE USING SEPARATED-MEDIUM ACOUSTOELECTRIC EFFECT

被引：16

作者：

SHIOSAKI, T ^{[1
]}

KURODA, T ^{[1
]}

KAWABATA, A ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,KYOTO,JAPAN

来源：

关键词：

D O I：

10.1063/1.88178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：360 / 362

页数：3

共 11 条

[1] FRANKL DR, 1967, ELECTRICAL PROPERTIE, P93
[2] GROVE AS, 1967, PHYS TECHNOL S, P263
[3] REVIEW OF GERMANIUM SURFACE PHENOMENA
KINGSTON, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114
[4] RELAXATION TIME OF SURFACE STATES ON GERMANIUM
KINGSTON, RH
MCWHORTER, AL
[J]. PHYSICAL REVIEW, 1956, 103 (03): : 534 - 540
[5] SIGNAL PROCESSING IN ACOUSTIC SURFACE-WAVE DEVICES
KINO, GS
MATTHEWS, H
[J]. IEEE SPECTRUM, 1971, 8 (08) : 22 - &
[6] NEW INTERPRETATION OF SLOW SURFACE RELAXATIONS ON GERMANIUM
KOC, S
[J]. PHYSICA STATUS SOLIDI, 1962, 2 (10): : 1304 - 1311
[7] MANY A, 1965, SEMICONDUCTOR SURFAC, P209
[8] SLOW SURFACE REACTION ON GERMANIUM
MORRISON, SR
[J]. PHYSICAL REVIEW, 1956, 102 (05): : 1297 - 1301
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P425
[10] TAKADA S, 1973, 4 P C SOL STAT DEV T, P21