CHARACTERIZATION OF TRANSPORT PARAMETERS OF HOLE TRAPS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

OHEDA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.337838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2925 / 2930

页数：6

共 18 条

[1]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[2]

DEPPINA SP, 1984, PHILOS MAG B, V50, P579

[3]

DUNNSTAN DJ, 1982, J PHYS C, V30, pL425

[4] EXCITATION-ENERGY DEPENDENCE OF THE PHOTO-LUMINESCENCE TOTAL-LIGHT DECAY IN ARSENIC CHALCOGENIDES [J].

HIGASHI, GS ;

KASTNER, MA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (01) :83-98

[5]

Matsumoto N., 1981, Japanese Journal of Applied Physics, V20, P179

[6] EXCITATION-ENERGY DEPENDENCE OF ELECTRON LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

OHEDA, H .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4197-4203

[7] TRANSIENT-PHOTOCURRENT STUDY OF LOCALIZED STATES AT THE CONDUCTION-BAND EDGE OF A-SI-H [J].

OHEDA, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (04) :857-867

[8] PHOTOINDUCED TRANSIENT LOCALIZED STATES IN A-SI-H [J].

OKUSHI, H ;

ASANO, A ;

MIYAKAWA, M ;

YAMASAKI, S ;

TANAKA, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :393-396

[9] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

PHYSICAL REVIEW B, 1982, 25 (06) :4313-4316

[10]

OKUSHI H, 1983, J NONCRYST SOLIDS, V59, P436

← 1 2 →