REACTIVE ION ETCHING OF ALUMINUM SILICON

被引：13

作者：

LIGHT, RW

机构：

来源：

关键词：

D O I：

10.1149/1.2119557

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2225 / 2230

页数：6

共 31 条

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CHAPMAN, BN ;

MINKIEWICZ, VJ .

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[4]

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[5]

COBURN JW, 1982, PLASMA ETCHING REACT, P1

[6]

DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161

[7]

DONOHOE KG, 1982, PLASMA PROCESSING, P306

[8]

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[9]

Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]

[10]

HESS DW, 1981, SOLID STATE TECHNOL, V24, P189