STUDY AND APPLICATION OF THE MASS-TRANSPORT PHENOMENON IN INP

[1] VECTOR THERMODYNAMICS FOR ANISOTROPIC SURFACES .2. CURVED AND FACETED SURFACES [J]. ACTA METALLURGICA, 1974, 22 (10): : 1205 - 1214

[2] LOW THRESHOLD INGAASP TERRACE MASS-TRANSPORT LASER ON SEMI-INSULATING SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1115 - 1117

[3] CHEN TR, UNPUB IEEE J QUANT E

[4] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 568 - 570

[5] LIAU ZL, 1982, TOPICAL M INTEGRATED

[6] MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 595 - 596

[7] Sze S.M., 1981, PHYSICS SEMICONDUCTO

[8] UTAKA K, COMMUNICATION

[1] VECTOR THERMODYNAMICS FOR ANISOTROPIC SURFACES .2. CURVED AND FACETED SURFACES [J]. ACTA METALLURGICA, 1974, 22 (10): : 1205 - 1214

[2] LOW THRESHOLD INGAASP TERRACE MASS-TRANSPORT LASER ON SEMI-INSULATING SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1115 - 1117

[3] CHEN TR, UNPUB IEEE J QUANT E

[4] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 568 - 570

[5] LIAU ZL, 1982, TOPICAL M INTEGRATED

[6] MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 595 - 596

[7] Sze S.M., 1981, PHYSICS SEMICONDUCTO

[8] UTAKA K, COMMUNICATION