MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS

被引：63

作者：

SOGA, T ^{[1
]}

HATTORI, S ^{[1
]}

SAKAI, S ^{[1
]}

TAKEYASU, M ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 22期

关键词：

D O I：

10.1049/el:19840623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：916 / 918

页数：3

相关论文

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