GROUND-STATE PROPERTIES OF POLYTYPES OF SILICON-CARBIDE

被引：53

作者：

DENTENEER, PJH

VANHAERINGEN, W

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2831

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2831 / 2834

页数：4

共 23 条

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