EPITAXIAL YBA2CU3OX THIN-FILMS ON SAPPHIRE USING A Y-STABILIZED ZRO2 BUFFER LAYER

被引：28

作者：

SCHMIDT, H ^{[1
]}

HRADIL, K ^{[1
]}

HOSLER, W ^{[1
]}

WERSING, W ^{[1
]}

GIERES, G ^{[1
]}

SEEBOCK, RJ ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,W-8520 ERLANGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.105972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial, c-oriented YBa2Cu3O(x) thin films were deposited by dc sputtering on (11BAR02)-sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO2 (YSZ), which was grown by rf magnetron sputtering. The epitaxy of the YSZ and the YBa2Cu3O(x) films was proved by Rutherford backscattering spectrometry combined with ion channeling. The YBa2CU3Ox films exhibited transition temperatures of 90 K and had critical current densities exceeding 1.2 X 10(6) A/cm2 at 77 K in zero magnetic field.

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页码：222 / 224

页数：3

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