CONDUCTION-BAND OFFSET DETERMINATION IN GAAS-ALXGA1-XAS THROUGH MEASUREMENT OF INFRARED INTERNAL PHOTOEMISSION

被引：10

作者：

GOOSSEN, KW ^{[1
]}

LYON, SA ^{[1
]}

机构：

[1] SIEMENS RES & TECHNOL LABS,PRINCETON,NJ 08540

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9370

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9370 / 9373

页数：4

共 10 条

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[3] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

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FISCHER, R ;

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[4] BAND DISCONTINUITIES IN GAAS/ALXGA1-XAS HETEROJUNCTION PHOTODIODES [J].

HAASE, MA ;

EMANUEL, MA ;

SMITH, SC ;

COLEMAN, JJ ;

STILLMAN, GE .

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[5]

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[6]

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[7] CALCULATED ENERGY-LEVELS AND OPTICAL-ABSORPTION IN N-TYPE SI ACCUMULATION LAYERS AT LOW-TEMPERATURE [J].

STERN, F .

PHYSICAL REVIEW LETTERS, 1974, 33 (16) :960-963

[8] DOPING CONSIDERATIONS FOR HETEROJUNCTIONS [J].

STERN, F .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :974-976

[9] AN EXPLANATION FOR ANOMALOUS DONOR ACTIVATION-ENERGIES IN AL0.35GA0.65AS [J].

THORNE, RE ;

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[10]

VOROBKALO FM, 1975, SOV PHYS SEMICOND+, V9, P656

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