1/F NOISE IN P-N-JUNCTION DIODES

被引：90

作者：

KLEINPENNING, TGM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573194

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：176 / 182

页数：7

共 22 条

[1] EXCESS NOISE SOURCES DUE TO DEFECTS IN FORWARD BIASED JUNCTIONS [J].

BLASQUEZ, G .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1425-1430

[2]

DORNHAUS R, 1983, SPRINGER TRAC MOD PH, V98, P119

[3] ON EXPRESSIONS FOR 1/F NOISE IN MOBILITY [J].

HOOGE, FN .

PHYSICA B & C, 1982, 114 (03) :391-392

[4] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[5] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J].

HSU, ST ;

FITZGERALD, DJ ;

GROVE, AS .

APPLIED PHYSICS LETTERS, 1968, 12 (09) :287-+

[6]

IVANOV SN, 1969, PHYSICS MICROWAVE SE

[7] 1-F NOISE IN P-N DIODES [J].

KLEINPENNING, TGM .

PHYSICA B & C, 1980, 98 (04) :289-299

[8] 1-F NOISE IN SOLID-STATE SINGLE INJECTION DIODES [J].

KLEINPENNING, TGM .

PHYSICA B & C, 1978, 94 (02) :141-151

[9] ON 1/F NOISE AND DETECTIVITY IN REVERSE-BIASED PARA NORMAL-JUNCTION PHOTO-DIODES [J].

KLEINPENNING, TGM .

PHYSICA B & C, 1983, 121 (1-2) :81-88

[10]

KLEINPENNING TGM, UNPUB

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