CONDITIONS FOR OPTIMUM NOISE PERFORMANCE IN LF AMPLIFIERS EMPLOYING JUNCTION FETS

被引:3
作者
KNOTT, KF
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D O I
10.1049/el:19680072
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:92 / &
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[1]   COMPARISON OF VARACTOR-DIODE AND JUNCTION-FET LOW-NOISE LF AMPLIFIERS [J].
KNOTT, KF .
ELECTRONICS LETTERS, 1967, 3 (11) :512-&
[2]   LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS [J].
LAURITZEN, PO .
SOLID-STATE ELECTRONICS, 1965, 8 (01) :41-+
[3]  
VANDERZIEL A, 1962, P IRE, V50, P1808