PHOTOCAPACITANCE STUDIES OF DEEP LEVELS IN ZINC-SULFIDE

被引：6

作者：

ZHENG, JZ

ALLEN, JW

机构：

[1] Dept. of Phys. and Astron., St Andrews Univ., Fife

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 10期

关键词：

D O I：

10.1088/0268-1242/5/10/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photocapacitance measurements using the double light source steady-state method have been made on ZnS single crystals. The Schottky diodes were made by evaporating a metal contact onto a chemically cleaned ZnS surface. Levels were found at 0.9 and 2.0 eV below the conduction band and 0.8 eV above the valence band in both melt-grown and iodine-transported material. An additional level at 1.6 eV below the conduction band occurred in the iodine-transported material.

引用

页码：1013 / 1017

页数：5

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