STRUCTURAL CHARACTERIZATION OF GE MICROCRYSTALS IN GEXC1-X FILMS

被引：17

作者：

CARLES, R ^{[1
]}

MLAYAH, A ^{[1
]}

AMJOUD, M ^{[1
]}

REYNES, A ^{[1
]}

MORANCHO, R ^{[1
]}

机构：

[1] ENSCT,MAT LAB,CNRS,URA 445,F-31062 TOULOUSE,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 11期

关键词：

GERMANIUM; MICROCRYSTALS; X-RAY DIFFRACTION; RAMAN SPECTROSCOPY; GRAIN SIZE; PHONON CONFINEMENT;

D O I：

10.1143/JJAP.31.3511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical and structural characteristics of GexC1-x films grown by metalorganic chemical vapour deposition are examined. The effects of the precursor nature (tetravinyl- or tetraethylgermane), growth temperature (in the 500-580-degrees-C range) and carrier gas (He or H-2) are analysed using electron microprobe, X-ray diffraction, X-ray photoelectron, infrared and Raman spectroscopies. The film structure is governed by the growth conditions. It evolves between two border-line cases: An amorphous-like Ge phase embedded in a graphitic matrix and a polycrystalline Ge phase. A comparative study of the average grain size deduced from X-ray diffraction and Raman scattering data is presented.

引用

页码：3511 / 3514

页数：4

共 18 条

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[2]

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[3]

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[4]

BOOTH DC, 1981, J PHYS FRANCE, V42, P64